The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2003
Filed:
May. 28, 1999
Seiji Sogo, Kyoto, JP;
Yuji Ueno, Shiga, JP;
Seiki Yamaguchi, Shiga, JP;
Yoshihiro Mori, Kyoto, JP;
Yoshiaki Hachiya, Shiga, JP;
Satoru Takahashi, Kyoto, JP;
Yuji Yamanishi, Osaka, JP;
Ryuma Hirano, Kyoto, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
The semiconductor device of the present invention includes: a semiconductor layer of a first conductivity type; source and drain regions of a second conductivity type, which are formed within the semiconductor layer; a channel region provided between the source and drain regions; and a gate electrode formed over the channel region. The device further includes: a buried region of the first conductivity type, at least part of the buried region being included in the drain region; and a heavily doped region of the second conductivity type. The heavily doped region is provided at least between a surface of the semiconductor layer and the buried region. The concentration of a dopant of the second conductivity type in the heavily doped region is higher than that of the dopant of the second conductivity type in the drain region.