The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2003
Filed:
Sep. 06, 2001
Applicant:
Inventors:
Nobuaki Hayashi, Aichi, JP;
Tetsuya Takeuchi, Mountain View, CA (US);
Hiroshi Amano, Aichi, JP;
Isamu Akasaki, Aichi, JP;
Assignee:
Lumileds Lighting U.S., LLC, San Jose, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/906 ; H01L 3/300 ;
U.S. Cl.
CPC ...
H01L 2/906 ; H01L 3/300 ;
Abstract
A nitride semiconductor epitaxial substrate includes a low-temperature-deposited buffer layer, the composition of which is Al Ga N, where 0≦x≦1, and a single crystalline layer, the composition of which is Al Ga N, where 0>y≦1. The single crystalline layer is deposited directly over the low-temperature-deposited buffer layer, wherein the buffer layer has a mole fraction x satisfying (y−0.3)≦x>y.