The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2003
Filed:
Oct. 05, 2001
Yasuhiro Hashimoto, Kyoto, JP;
Takayuki Negami, Osaka, JP;
Shigeo Hayashi, Kyoto, JP;
Takuya Satoh, Nara, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A solar cell includes a first semiconductor layer that is p-type, and a second semiconductor layer that is n-type formed over the first semiconductor layer. The solar cell includes a layer A made of a semiconductor different from the first semiconductor layer and the second semiconductor layer or an insulator between the first semiconductor layer and the second semiconductor layer. The band gap Eg of the first semiconductor layer and the band gap Eg of the second semiconductor layer satisfy the relationship Eg <Eg . The electron affinity &khgr; (eV) of the first semiconductor layer and the electron affinity &khgr; (eV) of the second semiconductor layer satisfy the relationship 0≦(&khgr; −&khgr; )<0.5, and the average layer thickness of the layer A is 1 nm or more and 20 nm or less.