The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2003
Filed:
Nov. 29, 2000
Jong Dae Kim, Taejon, KR;
Sang Gi Kim, Taejon, KR;
Jin Gun Koo, Taejon, KR;
Kee Soo Nam, Taejon, KR;
Dae Woo Lee, Taejon, KR;
Tae Moon Roh, Taejon, KR;
Abstract
A method of fabricating a vertical TDMOS power device using sidewall spacers and a self-align technique and a TDMOS power device of the same. The TDMOS is fabricated using only 3 masks and a source is formed using the self-align technique to embody a highly integrated trench formation. During the process, ion implantation of high concentration into the bottom of the trench makes a thick oxide film grow on the bottom and the corner of the gate, so that electrical characteristic, specifically leakage current and breakdown voltage of the device can be improved. Also, process steps can be much decreased to lower process cost, high integration is possible, and reliability of the device can be improved.