The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2003
Filed:
Feb. 23, 2001
Applicant:
Inventors:
Assignee:
Fujitsu Limited, Kawasaki, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01G 4/00 ;
U.S. Cl.
CPC ...
H01G 4/00 ;
Abstract
A reaction byproduct which is generated when a ferro-dielectric material film is etched is removed without giving adverse effect on the semiconductor element. After the etching of the ferro-dielectric material film, a wetting process may performed using an aqueous solution of phosphoric acid. After the ferro-dielectric material film is etched using the resist as the mask, the wetting process is also performed using the aqueous solution of phosphoric acid before and after the ashing of resist.
Quick Actions:
Kato, Yoshikazu. (2003). Method of manufacturing semiconductor device having ferro-dielectric material film (U.S. Patent No. 6533948). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6533948
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile