The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 11, 2003
Filed:
Nov. 30, 1998
Håkan Sjödin, Knivsta, SE;
Hans Hjelmgren, Bromma, SE;
Lars-Peter Jacobson, Sundbyberg, SE;
Anders Eklund, Sundbyberg, SE;
Telefonaktiebolaget LM Ericsson, Stockholm, SE;
Abstract
An improved system for simulating bipolar transistors with a variation in Early voltage as a function of collector/emitter bias voltage is disclosed. The simulation is based upon a standard Gummel-Poon model and is improved by an Early voltage extension, where the constant Early voltage is replaced by an Early voltage that is divided into several regions. The Early voltage is adjusted to fit the actual variations of the measured Early voltage characteristics of a bipolar transistor. The Early voltage within each region is used for calculating the bipolar transistors base charge which then is used to simulate the performance of the bipolar transistor. The regions may be linked together by choice of boundary conditions.