The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 11, 2003
Filed:
Mar. 21, 2002
Osamu Iioka, Kawasaki, JP;
Naoto Emi, Kawasaki, JP;
Atsushi Shoji, Kawasaki, JP;
Hiroshi Mawatari, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A nonvolatile semiconductor memory device includes a virtual-ground memory array which includes a plurality of nonvolatile memory cells and sub-bit lines connected to the nonvolatile memory cells, first and second selection lines, first and second selection transistors which become conductive in response to activation of the first selection line, a third selection transistor which become conductive in response to activation of the second selection line, a first main bit line which is coupled to and supplies a drain potential to a sub-bit line situated on a drain side of a selected memory cell through the first selection transistor, a second main bit line which is coupled to and supplies a source potential to a sub-bit line situated on a source side of the selected memory cell through one of the second selection transistor and the third selection transistor, and a third main bit line which is coupled to a sub-bit line adjacent to the sub-bit line situated on the drain side of the selected memory cell through another one of the second selection transistor and the third selection transistor, and is coupled to a potential substantially the same as the drain potential.