The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 11, 2003
Filed:
Dec. 27, 2001
Richard S. Burton, Newbury Park, CA (US);
Apostolos Samelis, Simi Valley, CA (US);
Kyushik Hong, Thousand Oaks, CA (US);
Skyworks Solutions, Inc., Newport Beach, CA (US);
Abstract
According to one disclosed embodiment, a heavily doped subcollector is formed. Subsequently, a collector is fabricated over the heavily-doped subcollector, wherein the collector comprises a medium-doped collector layer adjacent to the subcollector and a low-doped collector layer over the medium-doped collector layer. Both the medium-doped collector layer and the low-doped collector layer can comprise gallium-arsenide doped with silicon at between approximately 5×10 cm and approximately 1×10 cm , and at between approximately 1×10 cm and approximately 3×10 cm , respectively. Thereafter, a base is grown over the collector, and an emitter is deposited over the base. The collector of the HBT prevents the depletion region from reaching the subcollector without unduly impeding the expansion of the depletion region. As a result, filamentation in the subcollector is prevented, but the HBT's performance remains optimal.