Process for the production of a semiconductor device having better interface adhesion between dielectric layers

Abstract

A method for manufacturing a semiconductor device having improved adhesion at an interface between layers of dielectric material, comprising the steps of forming a first layer of dielectric material on at least one part of a structure defined in a semiconductor substrate and forming a second dielectric material layer superimposed on the least one part of the first layer. The method further includes the step of forming, in the part where the first and second layers are superimposed, an intermediate adhesion layer comprising a ternary compound of silicon, oxygen and carbon. The formation of the adhesion layer takes place at low temperature and in an atmosphere kept essentially free of oxidative substances different from those serving to provide the silicon and the carbon to the layer. Preferably the layer is formed by the plasma enhanced chemical vapour deposition technique. The ternary dielectric compound of silicon, oxygen and carbon obtained is preferably useful to aid in adhesion between layers of dielectric materials, particularly in semiconductor devices. Alternatively, in another embodiment of the invention, in a process which is more generally useful for deposition of a dielectric material layer comprising silicon, the layer is formed at low temperature by the chemical vapour deposition technique, preferably plasma enhanced, in an atmosphere kept essentially free of exogenous oxidative substances, (i.e., in which the oxidizer is contained in the molecules used to provide the species of atoms other than oxygen comprised in the layer).