The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 11, 2003
Filed:
Nov. 28, 2000
Applicant:
Inventor:
Byung Hak Lee, Chungcheongbuk-do, KR;
Assignee:
Hyundai Electronics Industries Co., Ltd., Kyoungki-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/144 ; H01L 2/13205 ;
U.S. Cl.
CPC ...
H01L 2/144 ; H01L 2/13205 ;
Abstract
A method for forming a gate electrode of a semiconductor device, which improves thermal stability of a tungsten/polysilicon structure. The method for forming a gate electrode of a semiconductor device includes: sequentially forming a first insulating film, a polysilicon layer and a tungsten layer on a semiconductor substrate; adding oxygen to the tungsten layer; forming a second insulating film on the tungsten layer to which oxygen is added; and selectively removing the second insulating film, the tungsten layer, the polysilicon layer and the first insulating film to form a gate electrode.