The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 11, 2003
Filed:
Apr. 17, 2002
Weizhong Cai, Scottsdale, AZ (US);
Chandrasekhara Sudhama, Phoenix, AZ (US);
Yujing Wu, Chandler, AZ (US);
Keith Kamekona, Scottsdale, AZ (US);
Semiconductor Components Industries LLC, Phoenix, AZ (US);
Abstract
A method of making a semiconductor device ( ) having a low permittivity region ( ) includes forming a first layer ( ) over a surface of a trench ( ), and etching through an opening ( ) in the first layer that is smaller than a width (W ) of the trench to remove a first material ( ) from the trench. A second material ( ) is deposited to plug the opening to seal an air pocket ( ) in the trench. The low permittivity region features air pockets with a high volume because the small size of the opening allows the second material to plug the trench without accumulating significantly in the trench.