The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 11, 2003
Filed:
Dec. 04, 2001
Applicant:
Inventors:
Assignee:
LG.Philips LCD Co., LTD, Seoul, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/100 ;
U.S. Cl.
CPC ...
H01L 2/100 ;
Abstract
A method of crystallizing amorphous silicon includes forming an amorphous silicon layer over a substrate, forming a plurality of metal clusters on the amorphous silicon layer, and simultaneously applying a thermal treatment, an electric field, and a magnetic field to crystallize the amorphous silicon layer.
Kim, Hae-Yeol. (2003). Method for crystallizing amorphous silicon and fabricating thin film transistor using crystallized silicon (U.S. Patent No. 6531348). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6531348
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile