The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 11, 2003
Filed:
Apr. 06, 2000
Steven C. Avanzino, Cupertino, CA (US);
Larry Yu Wang, San Jose, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A method and article of manufacture of a semiconductor device having a cleaned source/drain surface and substantially uniform cobalt silicide deposited thereon. The method of the invention includes a precursor conventional step of an argon ion pre-sputter step which generally cleans the semiconductor device surfaces but ensures a resputtering of SiO to form SiO species deposits on the source/drain surface of the device. An in situ treatment using silicon hydride species causes reduction of the SiO species leaving a cleaned residual silicon which can accept a cobalt deposition to form a desired cobalt silicide layer on the source/drain surface.