The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2003
Filed:
Feb. 14, 2001
Applicant:
Inventor:
Fusao Yamanaka, Kaisei-machi, JP;
Assignee:
Fuji Photo Film Co., Ltd., Kanagawa, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/00 ;
U.S. Cl.
CPC ...
H01S 5/00 ;
Abstract
In a semiconductor laser device including a multilayered structure being formed of a plurality of semiconductor layers made of a plurality of group III-V compounds, and having a pair of opposite light-exit end facets; and a reflectance control layer being formed on at least one of the pair of light-exit end facets, and having at least two sublayers. In the semiconductor laser device, a region near a boundary between the multilayered structure and one of the at least two sublayers closest to the semiconductor layers of the reflectance control layer has an oxygen concentration of 15 atomic percent (atm %) or below.