The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2003
Filed:
Sep. 20, 2000
Applicant:
Inventors:
Michael Han, San Jose, CA (US);
Narbeh Derhacobian, Belmont, CA (US);
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 1/604 ;
U.S. Cl.
CPC ...
G11C 1/604 ;
Abstract
An efficient NAND array structure includes memory cells coupled in series between a bit-line and a select source transistor, without a select drain transistor. The memory cells each include a floating gate transistor, having a control gate connected to a word-line, which selects the memory cell during its programming. In one embodiment, the NAND array structure includes a buried layer at a junction between the substrate and a well in which the memory cells are formed. Programming is achieved using hot electron injection. In one embodiment, multiple memory cells are programmed simultaneously.