The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2003
Filed:
Jan. 05, 2001
Hsu-Yuan Chin, Hsinchu, TW;
Wen-Chi Lin, Nantou, TW;
Silicon Touch Technology Inc., Hsinchu, TW;
Abstract
A power polarity reversal protecting circuit for an integrated circuit includes a protecting transistor, PMOS components and NMOS components, wherein the protecting transistor is a protecting PMOS transistor or a protecting NMOS transistor. If the protecting transistor is the PMOS transistor, a gate and a source of the protecting PMOS transistor are respectively connected to ground and power. A drain and a substrate of the protecting PMOS transistor is connected to a substrate of the PMOS component. If the protecting transistor is the protecting NMOS transistor, a gate and a source of the protecting NMOS transistor are respectively connected to power and ground. A drain and a substrate of the protecting NMOS transistor is connected to a substrate of the NMOS component. When the power polarity is in reversal connection, the protecting transistors are terminated to prevent damage from the power polarity reversal connection.