The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2003
Filed:
Feb. 27, 2001
Applicant:
Inventors:
Tsuneo Tokumitsu, Yamanashi-ken, JP;
Osamu Baba, Yamanashi-ken, JP;
Assignee:
Fujitsu Quantum Devices Limited, Yamanashi, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03B 1/900 ;
U.S. Cl.
CPC ...
H03B 1/900 ;
Abstract
A damping resistance is connected between the drain D of an FET and a first end T of an output transmission line , and a damping resistance is connected between the drain D of an FET and the first end T . The source of the FET and the gate of the FET are connected to a ground plane on the back surface of a substrate through a via which has a parasitic inductance when a multiplied frequency exceeds 20 GHz. The gate of the FET and the source of the FET receive microwaves of the same frequency and phase through an input transmission line