The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2003
Filed:
Sep. 23, 1999
Applicant:
Inventors:
Edward J. Nowak, Essex Junction, VT (US);
Minh H. Tong, Essex Junction, VT (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/976 ;
U.S. Cl.
CPC ...
H01L 2/976 ;
Abstract
A silicon on insulation device having halo extensions of source and drain regions and an additional implant for inducing silicon lattice damage is able to withstand high operating voltages. A field lowering Lightly Doped Drain implant and removal of standard damaging source implants decreases avalanche currents and significantly increases drain-to-source breakdown voltage.
Nowak, Edward. (2003). Asymmetric high voltage silicon on insulator device design for input output circuits (U.S. Patent No. 6528846). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6528846
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