The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2003
Filed:
May. 24, 2001
Tetsuya Uemura, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A differential negative resistance element includes a heavily doped GaAs layer interposed between a collector layer of lightly doped GaAs and an emitter layer of heavily doped AlGaAs, is shared between a base region between the collector layer and the emitter layer, a base contact region and a channel region between the base region and the base contact region, and a depletion layer is developed into the channel region together with the collector voltage so as to exhibit a differential negative resistance characteristics, wherein the channel region is formed through an epitaxial growth and etching so that the manufacturer easily imparts target differential negative resistance characteristics to the channel region.