The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2003
Filed:
Mar. 06, 2001
Fuji Electric Co., Ltd., , JP;
Abstract
A depletion type MOS semiconductor device is provided which includes a p well region formed in a surface layer of an n drift layer, an n emitter region formed in a surface layer of the p well region, an n depletion region formed in the surface layer of the p well region, to extend from the n emitter region to a surface layer of the n drift layer, a gate electrode layer formed on a gate insulating film, over the n depletion region, an emitter electrode formed in contact with surfaces of both of the n emitter region and the p well region, and a collector electrode formed on a rear surface of the n drift layer. Also provided is a MOS power IC in which the depletion type MOS semiconductor device is integrated with a vertical MOSFET or IGBT. The MOS power IC has a high breakdown voltage, and includes a circuit for feeding back an increase in the potential of the C terminal to the gate (g ) of the MOSFET or IGBT. Other examples of MOS power IC may include circuits suitable for high-speed turn-on or turn-off operations, and circuits for supplying power to an internal control circuit.