The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2003
Filed:
May. 29, 2001
Thomas Jackson, State College, PA (US);
Mathias Bonse, Santa Rosa, CA (US);
Daniel B. Thomasson, Santa Rosa, CA (US);
Hagen Klauk, 91058 Erlangen, DE;
David J. Gundlach, State College, PA (US);
Other;
Abstract
An integrated organic/inorganic complementary thin-film transistor circuit comprises a first and a second transistor which are operatively connected on a common substrate, wherein the first transistor is an inorganic thin-film transistor and the second an organic thin-film transistor. The inorganic thin-film transistor is an n-channel transistor and the organic thin-film transistor is a p-channel transistor or vice versa. Each of the transistors has a separate gate electrode and the organic active semiconductor material is in the case of a p-channel semiconductor in the organic thin-film transistor electrically isolated from the inorganic thin-film transistor. In a first method for fabricating a transistor circuit of this kind separate gate electrodes are deposited for each transistor on a common substrate, the material for the source and the drain electrode of the organic thin-film transistor are deposited on the same layer level in the thin-film structure of the organic thin-film transistor and in each case the organic active semiconductor material in an organic p-channel transistor is provided electrically isolated from the inorganic n-channel transistor, and the organic active semiconductor material in an organic n-channel transistor optionally electrically isolated from the inorganic p-channel transistor.