The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2003
Filed:
Sep. 20, 2001
Jeong Ho Kim, Kyoungki-do, KR;
Jae Seon Yu, Kyoungki-do, KR;
Hynix Semiconductor Inc., Kyungki-Do, KR;
Abstract
A method for manufacturing a semiconductor device is disclosed. In a method for forming a contact plug according to a high integration of a semiconductor device, the method for manufacturing a semiconductor device leaves a low dielectric insulating film as a release film in a bit line contact and a storage electrode contact region of an upper semiconductor substrate where a MOSFET is provided, forms a contact plug which buries a spacing between the bit line contact and the storage electrode contact region, forms a contact plug without damaging a lower layer by removing the release layer, and solves a misalignment problem that occurs during a photolithography process and solves a problem in obtaining a contact area by a slope etching profile that occurs during the etching process, thereby providing an improved process margin.