The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2003
Filed:
Jun. 26, 2001
Sung Gyu Pyo, Ichon-Shi, KR;
Hynix Semiconductor Inc., Ichon-Shi, KR;
Abstract
A method of forming a metal line in a semiconductor device comprises forming a damascene pattern, forming a diffusion barrier layer, depositing a copper precursor by a spin-on process, forming a thin copper film by a baking process, filling the damascene pattern by a hydrogen reduction annealing process and a force filling process, and then forming a copper line by a chemical mechanical polish method. As such, the method forms a copper line without forming a seed layer by simultaneously performing a hydrogen reduction annealing process and a force filling process, by introducing a spin-on process. Therefore, the method can simplify the process, reduce the manufacturing cost, and easily form a copper line.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile