The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2003
Filed:
Dec. 11, 2000
Young Gwan Kim, Chungcheongbuk-do, KR;
Hyundai Electronics Industries Co., Ltd., Kyoungki-do, KR;
Abstract
A method for fabricating a semiconductor device in which channel resistance is prevented from occurring due to impurity ion diffusion and gate resistance is reduced, thereby improving the speed characteristic of the device. The method for forming a dual gate of a semiconductor device includes the steps of forming a polysilicon layer on a semiconductor substrate; selectively forming an impurity ion layer of a first conductive type and an impurity ion layer of a second conductive type on a lower surface to the polysilicon layer; polishing the polysilicon layer; forming a low resistance metal layer on the polished polysilicon layer; forming a first gate electrode and a second gate electrode by an etching process using a gate mask; and forming source/drain regions of the first conductive type in the substrate at both sides of the first gate electrode and source/drain regions of the second conductive type in the substrate at both sides of the second gate electrode.