The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2003
Filed:
Apr. 07, 2000
Satoshi Arakawa, Tokyo, JP;
Toshikazu Mukaihara, Tokyo, JP;
Nobumitsu Yamanaka, Yokohama, JP;
Akihiko Kasukawa, Tokyo, JP;
The Furukawa Electric Co., Ltd., Tokyo, JP;
Abstract
Disclosed is a process of producing a semiconductor layer structure which emits lights with a plurality of luminescence wavelengths from the same quantum well structure. The layer structure has a layer structure which has the quantum well structure located between a lower light-confinement layer and an upper light-confinement layer. At least a part of the quantum well structure is an area which has a shorter luminescence wavelength than those of the other portions. This area is produced by stacking a lower cladding layer, the lower light-confinement layer, the quantum well structure, the upper light-confinement layer and a first semiconductor layer having a first conductivity type on a semiconductor substrate by epitaxial growth and further stacking a second semiconductor layer having the opposite conductivity type to that of the first semiconductor layer on the entire surface or a partial surface of the first semiconductor layer. This second semiconductor layer may be removed after the formation.