The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 04, 2003

Filed:

Aug. 30, 2000
Applicant:
Inventors:

Masaki Kataoka, Ebina, JP;

Michiaki Murata, Ebina, JP;

Norikuni Funatsu, Ebina, JP;

Kumiko Tanaka, Ebina, JP;

Toshimichi Iwamori, Ebina, JP;

Assignee:

Fuji Xerox Co. Ltd., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B32B 3/120 ;
U.S. Cl.
CPC ...
B32B 3/120 ;
Abstract

A satisfactory bonding is implemented at low cost. In a step, a resin layer is formed on a bonding surface side of a silicon wafer on which portion are formed electro-thermal transducers. In a later step, the silicon wafer and another silicon wafer are aligned and fixed temporarily, then the atmosphere is set at a pressure of 10 mbar or lower and the temperature is set at 300° C. or higher, and voltage is applied across the both wafers while pressure is applied to the wafers. When the value of an electric current flowing across the wafers has reached a level of a certain current value or lower, the application of the voltage is stopped and the atmosphere is opened to the atmospheric pressure while reducing the temperature.


Find Patent Forward Citations

Loading…