The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2003
Filed:
Oct. 12, 2000
Jacques Isaac Pankove, Boulder, CO (US);
Astralux, Inc., Boulder, CO (US);
Abstract
A GaN boule is epitaxially grown by reacting a vapor of the metal Ga with the gas NH at a high temperature of about 1200-degrees C., which high temperature causes the NH to dissociate into the two elements N and H. A seed 51 of GaN is placed within a growth-furnace that is heated to about 1200-degrees C., and an input stream of Ga vapor and NH gas are directed incident on the GaN seed. An upward-facing, shower head-shaped, manifold is provided to uniformly distribute the Ga vapor and the NH gas to the interior of the growth-furnace at a location that is generally below and spaced from the bottom of the GaN seed. GaN vapor is thus formed within this space, generally adjacent to the surface of the boule. At the exterior surface of the GaN seed, the Ga vapor reacts with the NH gas to epitaxially form solid GaN on the exterior surface of the GaN seed, and to also form H .