The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 25, 2003

Filed:

Sep. 14, 2000
Applicant:
Inventor:

Eileen H. You, San Jose, CA (US);

Assignee:

Sun Microsystems, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06F 9/45 ;
U.S. Cl.
CPC ...
G06F 9/45 ;
Abstract

A method for extracting parasitic capacitance from an integrated circuit layout includes decomposing nets in the integrated circuit layout into conductive segments along two mutually perpendicular directions. The method further includes summing capacitances between the conductive segments in a selected net and the other conductive segments in the integrated circuit layout that are aligned with the conductive segments in the selected net and multiplying the sum by a first scaling factor to obtain a first capacitance value. The method further includes summing capacitances between the conductive segments in the selected net and the other conductive segments in the integrated circuit layout that are transverse to the conductive segments in the selected net to obtain a second capacitance value. The first capacitance value and the second capacitance value are added together to obtain a total capacitance value for the selected net.


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