The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2003
Filed:
Oct. 06, 1998
Applicant:
Inventor:
Yasuhiro Kobayashi, Osaka, JP;
Assignee:
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/183 ;
U.S. Cl.
CPC ...
H01S 5/183 ;
Abstract
A lower mirror is formed on an n-type GaAs substrate. Next, an ion implanted region serving as a current confining region is formed through shallow ion implantation. Then, a SiO film mask is formed, and a multilayer structure including an active region and an upper mirror is selectively grown on an area not covered with the SiO film mask. In this manner, a surface emitting semiconductor laser with a low resistance and a low threshold current is obtained by using ion implantation and selective oxidation through a simplified fabrication process.