The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 25, 2003

Filed:

May. 14, 1998
Applicant:
Inventors:

Paul Wingshing Chung, San Jose, CA (US);

David Anthony Freitas, Morgan Hill, CA (US);

Kevin Roy Vannorsdel, San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11B 5/02 ; G11B 5/09 ;
U.S. Cl.
CPC ...
G11B 5/02 ; G11B 5/09 ;
Abstract

A method and apparatus for high voltage applications, with the latest MOSFET technology having limited terminal-to-terminal voltage capability, includes a switch circuit having at least two serially coupled MOSFETs and a two-stage MOSFET connection using a plurality of resistors, and/or a bipolar transistor, and a plurality of diodes. One of the high voltage applications is a high speed write driver in a computer disk drive. The switch circuit switches on/off between zero volt and a voltage higher than a maximum terminal-to-terminal voltage of a single MOSFET which is typically five volts. A required voltage in high voltage applications can be in excess of, for example, 8 or 9 volts.


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