The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2003
Filed:
Feb. 15, 2001
Applicant:
Inventor:
Kenji Okada, Toyonaki, JP;
Assignee:
Matsushita Electric Industrial Co., Ltd., Kadoma, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01H 3/112 ; G01R 3/126 ; H01L 2/100 ;
U.S. Cl.
CPC ...
H01H 3/112 ; G01R 3/126 ; H01L 2/100 ;
Abstract
A total injected electron quantity Q , which has reached a constant value against a variation in stress voltage applied to an insulating film for use in a semiconductor device, is obtained as a critical injected electron quantity Q . The total injected electron quantity Q is a total quantity of electrons injected into the insulating film before the film causes a dielectric breakdown. Thereafter, a time it should take for a total quantity of electrons, injected into the insulating film under actual operating conditions of the device, to reach the critical injected electron quantity Q is estimated as the expected lifetime of the insulating film.