The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2003
Filed:
Feb. 06, 2001
Jacques Bertrand, Capitola, CA (US);
Minh Van Ngo, Fremont, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A MOSFET semiconductor device includes a substrate, a gate electrode, a gate oxide, first and second sets sidewall spacers, and nickel silicide layers. The gate oxide is disposed between the gate electrode and the substrate, and the substrate includes source/drain regions. The gate electrode has first and second opposing sidewalls, and the first set of sidewall spacers are formed from a silicon starved spacer materials, examples of which include SiO , wherein X>2, SiN , wherein X>1, or SiO N , wherein X+Y>2. The second set of sidewall spacers are formed from silicon nitride and are respectively disposed adjacent the first set of sidewall spacers. The nickel silicide layers are disposed on the source/drain regions and the gate electrode. The first set of sidewall spacers act as a silicon diffusion barrier for preventing silicon from migrating from the gate electrode to the second set of sidewall spacers. A method of manufacturing the semiconductor device is also disclosed.