The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2003
Filed:
Jul. 16, 2001
Roland Sittig, Braunschweig, DE;
Detlef Nagel, Dresden, DE;
Infineon Technologies AG, Munich, DE;
Abstract
The invention relates to a semiconductor component with a base zone ( ) extending in a lateral direction (x) of a first type of conductivity (n) and at least two contact areas ( ) for connection to electric contacts (A, K) which zones are separate at least from the base zone ( ) in the lateral direction (x). A base material of the base zone ( ) is silicon (Si) and has a dopant concentration of 10 to 5×10 cm and a respective dopant concentration (N ) along a lateral direction (x) of less than 2×10 cm determined by integrating the dopant concentration across the vertical thickness of the base area ( ). The semiconductor component further comprises compensation layers ( ) of a second type of conductivity (p) opposed to the first type of conductivity. Said layers extend inside or outside the base area in a lateral direction (x).