The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2003
Filed:
Nov. 05, 2001
Bantval Jayant Baliga, Raleigh, NC (US);
Silicon Wireless Corporation, Research Triangle Park, NC (US);
Abstract
Vertical power devices include a semiconductor substrate having a first surface thereon and a drift region of first conductivity type therein. A quad arrangement of trenches are provided that extend into the first surface of the semiconductor substrate and define a drift region mesa therebetween. A base region of second conductivity type is included. The base region extends into the drift region and forms a first P-N rectifying junction therewith. A source region of first conductivity type is provided that extends into the base region and forms a second P-N rectifying junction therewith. A quad arrangement of insulated electrodes is provided in the quad arrangement of trenches. An insulated gate is provided on the drift region mesa. A source electrode is also provided that extends on the first surface. The source electrode is electrically connected to the source and base regions and to the quad arrangement of insulated electrodes.