The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 25, 2003

Filed:

Aug. 17, 2001
Applicant:
Inventors:

Osamu Yamashita, Ibaraki, JP;

Nobuhiro Sadatomi, Ibaraki, JP;

Tsunekazu Saigo, Matsubara, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 3/514 ;
U.S. Cl.
CPC ...
H01L 3/514 ;
Abstract

A silicon-based polycrystal powder, which contains no more than 30 at % Ge, C, Sn, or another such element that does not generate carriers as well as an added element that does generate carriers, and which has a crystal structure including crystal grains made up of at least 80 at % silicon, and a grain boundary phase where at least one type of said added element is precipitated at the boundary of said crystal grains, is mixed with a clathrate compound powder with low thermal conductivity and electrical resistivity, and this mixture is subjected to hot compression molding, the product of which has a composite structure in which the particles of the clathrate compound polycrystals are disposed around the particles of the silicon-based polycrystals.


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