The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2003
Filed:
Aug. 01, 2000
Prasad V. Alluri, Round Rock, TX (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
A metal-organic precursor suitable for use in a chemical vapor deposition formation of dielectric layer is disclosed. The precursor comprises a moiety that includes a first metal atom, an oxygen atom, and a nitrogen atom. The oxygen atom is chemically bonded to the metal atom and to the nitrogen atom. The first metal atom may be a Group III, Group IV, or Group V transition metals such as yttrium, lanthanum, titanium, zirconium, hafnium, niobium, and tantalum or another metal such as aluminum. The precursor may include one or more alkoxy groups bonded to the first metal atom. The precursor may be characterized as a M(OCR ) (ONR ) (OSiR ) molecule where Y is an integer from 1 to (X−1), Z is an integer from 0 to X−1, X is an integer from 3 to 5 depending upon the valency of M and (Y+Z) is less than or equal to X. In one embodiment the precursor further includes one or more siloxy or alkyl siloxy groups bonded to the first metal atom. The precursor is suitable for chemical vapor deposition process used to deposit a dielectric layer on a semiconductor substrate. In this embodiment, the dielectric layer may be intended as a gate dielectric layer or a capacitor dielectric layer.