The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2003
Filed:
May. 30, 2002
Jae-Seon Yu, Kyoungki-do, KR;
Hynix Semiconductor Inc., Kyoungki-Di, KR;
Abstract
Disclosed is a method for forming contact by using the ArF lithography technology using a low-k dielectric sacrifice layer. The method comprises forming a layer to be etched on the semiconductor substrate, successively forming a low-k dielectric sacrifice layer and a hard mask on the etched layer, forming an anti-reflective layer and a photoresist pattern on the hard mask by using ArF lithography technology, selectively etching the anti-reflective layer and the hard mask and simultaneously removing the photoresist pattern when etching the hard mask, forming a contact hole exposing a surface of the semiconductor substrate by etching the low-k dielectric sacrifice layer and the layer by using the hard mask as a mask and removing the hard mask and the low-k dielectric sacrifice layer.