The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 25, 2003

Filed:

Oct. 11, 2001
Applicant:
Inventors:

Eiji Tamaoka, Nishinomiya, JP;

Hideo Nakagawa, Omihachiman, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/14763 ;
U.S. Cl.
CPC ...
H01L 2/14763 ;
Abstract

After a conductive film and a lower interlayer insulating film are formed successively on a semiconductor substrate, a lower plug connected to the conductive film is formed in the lower interlayer insulating film. Then, etching is performed sequentially with respect to the lower interlayer insulating film and the conductive film by using a mask pattern and the lower plug as a mask, thereby forming a lower-layer wire composed of the conductive film and connected to the lower plug. Thereafter, an upper interlayer insulating film is formed such that air gaps are formed in the wire-to-wire spaces of the lower-layer wire. Subsequently, an upper plug connected to the lower plug is formed in the upper interlayer insulating film. After that, an upper-layer wire is formed on the upper interlayer insulating film to be connected to the upper plug.


Find Patent Forward Citations

Tamaoka, Eiji. (2003). Semiconductor device and method for fabricating the same (U.S. Patent No. 6524948). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6524948

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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