The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 25, 2003

Filed:

Jul. 25, 2001
Applicant:
Inventors:

In-Sik Moon, Kyungki-do, KR;

Dong-Seop Kim, Seoul, KR;

Soo-Hong Lee, Suwon, KR;

Assignee:

Samsung SDI Co., Ltd., Kyungki-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 3/104 ;
U.S. Cl.
CPC ...
H01L 3/104 ;
Abstract

A technique for fabricating a solar cell includes an n emitter region first being formed on a front surface of the cell, and then front and rear insulating layers being formed on both sides of the cell. P (Phosphorus)-source and B (Boron)-source are printed on the front and rear insulating layers, respectively, and then both dopants are diffused into the cell at high temperature. Therefore, n region in the front side of the cell and BSF (back surface field) region in the rear side of the cell is formed. Front and rear contact patterns are formed on the front and rear insulating layers, respectively. The n region and BSF region are exposed after front and rear contacts are formed on the front and rear insulating layers, respectively. The front and rear contacts contact the n region and BSF region, respectively.


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