The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2003
Filed:
Nov. 30, 2000
Hitoshi Tauchi, Anjo, JP;
Satoru Hori, Nagoya, JP;
Hirotsugu Sugiura, Hekinan, JP;
Hiroyasu Kojima, Toyota, JP;
Aisin Seiki Kabushiki Kaisha, Kariya, JP;
Abstract
A method for producing a thermoelectric semiconductor includes an ingot production step for producing an ingot of a thermoelectric semiconductor and an integrating step for integrating a plurality of the ingots by plastic deforming the ingots to produce an integrated ingot of the thermoelectric semiconductor. The large size of the thermoelectric semiconductor ingot having uniform performance and mechanical strength can be produced by integration of two or more ingots. Therefore, many wafers can be produce at one time in the slicing step, and productivity is improved. Further, two or more ingots are integrated by plastic deformation so that the connecting strength of the connecting interface is strong.