The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2003
Filed:
Sep. 22, 2000
Takashi Shimahara, Tokyo, JP;
Naoto Nakamura, Tokyo, JP;
Ichiro Sakamoto, Tokyo, JP;
Kiyohiko Maeda, Tokyo, JP;
Kokusai Electric Co., Ltd., Tokyo, JP;
Abstract
Substrate processing apparatus and method, by which an outside air and a gas-phase backward flow are restrained from entering the inside of a reaction chamber during the inside of a reaction chamber is opened to the outside through a substrate carrying-in/carrying-out opening. This substrate processing apparatus, for example, a vertical CVD apparatus ( ) has a gas supply system ( ) and a bypass line ( ). The gas supply system ( ) supplies an inert gas to a space ( ) between an outer tube ( A) and an inner tube ( A) of a reaction furnace ( ) in a boat loading term and a boat unloading term. The bypass line ( ) exhausts an atmosphere from a reaction chamber ( ) by performing a slow exhaust operation in the boat loading term and the boat unloading term.