The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 25, 2003

Filed:

Apr. 11, 2001
Applicant:
Inventors:

Ralf-Peter Brinkmann, München, DE;

Alfred Kersch, Putzbrunn, DE;

Assignee:

Infineon Technologies AG, München, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 1/435 ;
U.S. Cl.
CPC ...
C23C 1/435 ;
Abstract

The present invention relates to a system for executing a plasma-based sputtering method, such as for example a PVD (Physical Vapor Deposition) method. In a process chamber ( ), a plasma ( ) is produced in order to accelerate ionized particles, carried away from a sputter target ( ), through the plasma ( ) towards a substrate ( ), using an electrical field. In the process chamber ( ), between the plasma ( ) and the substrate ( ) a magnetic field component ( ) is produced by that is situated parallel to a substrate surface ( ). Through the magnetic field component ( ), the angular distribution of the ionized particles is deflected from its flight path perpendicular to the substrate surface, so that impact angles are produced that have a greater angular scattering.


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