Single crystal sic composite material for producing a semiconductor device, and a method of producing the same

Abstract

In a single crystal SiC composite material for producing a semiconductor device, and a method of producing the same according to the invention, a single crystal SiC film which is produced on an Si substrate by the heteroepitaxial growth method and obtained by removing the Si substrate, is stacked and bonded via a film-like SiO layer onto the surface of a polycrystalline plate consisting of Si and C atoms in a closely contacted manner forming thereby a stacked composite member. The stacked composite member is then heat-treated, whereby single crystal SiC in which the crystal is transformed in the same orientation as the single crystal of the single crystal SiC film is integrally grown on the polycrystalline plate. The thickness and the strength which are requested for producing a semiconductor device can be ensured, and lattice defects and micropipe defects seldom occur, so that an accurate and high-quality semiconductor device can be produced.