The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 18, 2003

Filed:

Jan. 27, 2000
Applicant:
Inventors:

Takenori Goto, Moriguchi, JP;

Nobuhiko Hayashi, Osaka, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S 5/00 ;
U.S. Cl.
CPC ...
H01S 5/00 ;
Abstract

A nitride semiconductor device of the self-pulsation type comprises as superposed on a substrate an n-type cladding layer , active layer and p-type cladding layer including an upwardly projecting stripe portion , an n-type current blocking layer being formed at each of opposite sides of the stripe portion . The stripe portion of the p-type cladding layer comprises an upper stripe portion and a lower stripe portion . The upper stripe portion has a minimum width W at the position of the boundary between the upper and lower stripe portions , and the lower stripe portion has at the position of its lower end a width W greater than the minimum width W of the upper stripe portion . This construction realizes a higher yield than in the prior art.


Find Patent Forward Citations

Goto, Takenori. (2003). Nitride semiconductor laser device (U.S. Patent No. 6522676). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6522676

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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