The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 18, 2003

Filed:

Mar. 28, 2001
Applicant:
Inventors:

Shi Ming Chen, Tainan Hsien, TW;

Wen Liang Li, Tainan, TW;

Henrg Chen, Tainan, TW;

Hsin Chuan Wang, Taipei, TW;

Assignee:

Epitech Corporation, Tainan County, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01J 1/62 ;
U.S. Cl.
CPC ...
H01J 1/62 ;
Abstract

A light emitting diode. The light emitting diode has a substrate that has two surfaces. On one surface, a distributed Bragg reflector, an n-type confining layer, an active layer, a p-type confining layer, a current spreading layer, a meshed Ohmic contact layer, a transparent conductive oxide layer and a front side electrode are formed. The other surface has a rear side electrode formed thereon. Via the meshed structure, the absorbing area of the Ohmic contact layer is reduced to avoid the light emitting from the active layer being greatly absorbed by the Ohmic contact layer. In contrast, the light intensity of the light emitting diode is increased.


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