The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2003
Filed:
Sep. 28, 2000
Applicant:
Inventors:
Wei-Shu Zhou, Fremont, CA (US);
Shuo-Yuan Hsiao, Milpitas, CA (US);
Nanlei Larry Wang, Palo Alto, CA (US);
Assignee:
EiC Corporation, Fremont, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/7082 ; H01L 2/7102 ; H01L 2/970 ; H01L 3/111 ;
U.S. Cl.
CPC ...
H01L 2/7082 ; H01L 2/7102 ; H01L 2/970 ; H01L 3/111 ;
Abstract
An RF microwave power transistor has an input/output feed structure which functions as a low impedance microstrip line by providing a ground plane in close proximity to the feed structure on one surface of a semiconductor body. A second ground plane can be provided on an opposing surface of the semiconductor body with vias interconnecting the first and second ground planes. In addition to reducing feed impedance, a larger total transistor size can be provided before “odd mode oscillation” occurs.