The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2003
Filed:
Jun. 06, 2001
Haruhiko Ono, Tokyo, JP;
NEC Corporation, , JP;
Abstract
In the case where a Ta O thin film having double bond Ta═O is employed for a capacitative insulating film, Rapid Thermal Anneal in oxygen, and UV/O treatment are executed at suitable temperature and in suitable time. Whether or not absorption peak which appears in 2340 cm exists and whether it is large or small are monitored by measuring a transmission infrared absorption spectrum of a Ta O thin film with Fourier Transform Infrared Spectroscopy. In the case where a Ta O thin film, in which an abundance ratio of oxygen in a three coordinate bonding state is large, is employed for a capacitative insulating film, an intensity ratio of each double peak which appears in 510 cm and 570 cm is measured as well, so that the film whose ratio (510/570) is larger than another one is used as Man character to improve quality of a film. Consequently, it is made possible to provide a manufacturing method of a semiconductor device in which a Ta O thin film, which has high permittivity and low leak current, is employed for a capacitative insulating film.