The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2003
Filed:
Aug. 17, 2001
Jih-Chang Lien, Taoyuan Hsien, TW;
Nanya Technology Corporation, Taoyuan, TW;
Abstract
The present invention provides a multiple exposure method for defining a rectangular pattern on a photoresist layer. The method comprises the following steps. First, a rectangular region is defined on the photoresist layer, having a first margin pair and a second margin pair corresponding to the rectangular pattern. Next, a first exposure process is performed on a first exposure region of the photoresist layer. An extension of the first margin pair acts as a boundary between the first exposure region and the rectangular region. Next, a second exposure process is performed on a second exposure region of the photoresist layer. An extension of the second margin pair acts as a boundary between the second exposure region and the rectangular region. Finally, a development process is performed on the first exposure region and the second exposure region to create the rectangular pattern on a substrate.