The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2003
Filed:
Jun. 29, 2000
Yoshiro Goto, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A thermal oxide film is formed on a silicon substrate, a polysilicon film is formed on the thermal oxide film, and further a patterned photoresist film is formed on the polysilicon. The polysilicon film and the thermal oxide film are etched using the photoresist film as a mask so as to form a gate electrode and a gate oxide film. The photoresist film is removed therefrom, and a thermal oxide film is formed in the circumference of the gate electrode, thereby to restore a constriction formed in the gate oxide film. A part of the thermal oxide film which corresponds to the gate electrode and another part thereof which corresponds to the semiconductor substrate are removed therefrom, and a side wall nitride film which adhere to the silicon substrate is formed on a side wall of the gate electrode. Thereafter, a source and drain diffusion layers corresponding to the gate electrode are formed on the silicon substrate, thereby to form metal wiring.