The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2003
Filed:
Jun. 04, 2002
Michael A. A. Zandt In't, Veldhoven, NL;
Erwin A. Hijzen, Blanden, NL;
Raymond J. E. Heuting, Helmond, NL;
Koninklijke Philips Electronics N.V., Eindhoven, NL;
Abstract
The manufacture of a vertical power transistor trench-gate semiconductor device in which the source regions ( ) are self-aligned to the trench-gate structures ( ) including the steps of forming a mask ( ) on a surface ( ) of a semiconductor body ( ), using the mask ( ) to form the trench-gate structures ( ), then using the mask ( ) to form U-shaped section layers ( A, B) of insulating material whose base portion ( B) provides a gate insulating layer on the gate material ( ), then removing the mask ( ) and forming spacers ( ) against well-defined steps provided by the upright portions ( A) of the U-shaped section layers, then using the spacers ( ) to form the source regions ( ).